Discrete Semiconductor Products

SSM6J206FE(TE85L,F

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MOSFET P-CH 20V 2A ES6

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Discrete Semiconductor Products

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MOSFET P-CH 20V 2A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J206FE(TE85L,F

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4 V, 1.8 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	335 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs (Max) [Max]	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6J206FE(TE85L,F	2 A	1 V	Surface Mount	ES6	130 mOhm	150 °C	8 V	SOT-563 SOT-666	MOSFET (Metal Oxide)	1.8 V 4 V	P-Channel	500 mW	335 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 20 V 2A (Ta) 500mW (Ta) Surface Mount ES6

Technical documentation and resources