SSM6J206 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2A ES6
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature | Vgs (Max) [Max] | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 A | 1 V | Surface Mount | ES6 | 130 mOhm | 150 °C | 8 V | SOT-563 SOT-666 | MOSFET (Metal Oxide) | 1.8 V 4 V | P-Channel | 500 mW | 335 pF | 20 V |