UPA2680T1E-E2-AT

Obsolete

N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2680T1E-E2-AT

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.1 nC
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	6-MLP (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

N-Channel Mosfet With Schottky Barrier Diode For Switching

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Feature	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation UPA2680T1E-E2-AT	190 pF	2 V	20 V	Surface Mount	N-Channel	6-MLP (3x3)	3.1 nC	6-VDFN Exposed Pad	Schottky Diode (Isolated)	50 mOhm	MOSFET (Metal Oxide)	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	508	$ 0.59

General part information

The UPA2680T1E is a N-Channel Mosfet With Schottky Barrier Diode For Switching.

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