N-Channel Mosfet With Schottky Barrier Diode For Switching
N-Channel Mosfet With Schottky Barrier Diode For Switching
N-Channel Mosfet With Schottky Barrier Diode For Switching
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | FET Feature | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 190 pF | 2 V | 20 V | Surface Mount | N-Channel | 6-MLP (3x3) | 3.1 nC | 6-VDFN Exposed Pad | Schottky Diode (Isolated) | 50 mOhm | MOSFET (Metal Oxide) | 3 A |