Discrete Semiconductor Products

SIR5808DP-T1-RE3

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N-CHANNEL 80 V (D-S) MOSFET POWE

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Discrete Semiconductor Products

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N-CHANNEL 80 V (D-S) MOSFET POWE

Technical Specifications

Parameters and characteristics for this part

Specification	SIR5808DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	18.8 A, 66.8 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5.2 W, 65.7 W
Rds On (Max) @ Id, Vgs	157 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Vgs (Max)	Mounting Type
Vishay General Semiconductor - Diodes Division SIR5808DP-T1-RE3	157 mOhm	-55 °C	150 °C	18.8 A 66.8 A	4 V	5.2 W 65.7 W	1210 pF	N-Channel	80 V	24 nC	MOSFET (Metal Oxide)	PowerPAK® SO-8	10 V	7.5 V	PowerPAK® SO-8	30 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 18.8A (Ta), 66.8A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources