SIR5808 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 80 V (D-S) MOSFET POWE
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Package / Case | Vgs (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 157 mOhm | -55 °C | 150 °C | 18.8 A 66.8 A | 4 V | 5.2 W 65.7 W | 1210 pF | N-Channel | 80 V | 24 nC | MOSFET (Metal Oxide) | PowerPAK® SO-8 | 10 V | 7.5 V | PowerPAK® SO-8 | 30 V | Surface Mount |