Discrete Semiconductor Products

FQP55N06

Obsolete

ON Semiconductor

MOSFET N-CH 60V 55A TO220-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

FQP55N06

Obsolete

ON Semiconductor

MOSFET N-CH 60V 55A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQP55N06

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1690 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	133 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQP5 Series

Part	Technology	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQP55N06	MOSFET (Metal Oxide)	60 V	Through Hole	N-Channel	46 nC	20 mOhm	1690 pF	55 A	25 V	10 V	TO-220-3	TO-220-3	133 W	-55 °C	175 ░C	4 V
ON Semiconductor FQP5N40	MOSFET (Metal Oxide)	400 V	Through Hole	N-Channel		1.6 Ohm	460 pF	4.5 A	30 V	10 V	TO-220-3	TO-220-3		-55 °C	150 °C	5 V	70 W	13 nC
ON Semiconductor FQP5N30	MOSFET (Metal Oxide)	300 V	Through Hole	N-Channel		900 mOhm	430 pF	5.4 A	30 V	10 V	TO-220-3	TO-220-3		-55 °C	150 °C	5 V	70 W	13 nC
ON Semiconductor FQP5N80	MOSFET (Metal Oxide)	800 V	Through Hole	N-Channel			1250 pF		30 V	10 V	TO-220-3	TO-220-3		-55 °C	150 °C	5 V	140 W		2.6 Ohm
ON Semiconductor FQP58N08	MOSFET (Metal Oxide)	80 V	Through Hole	N-Channel		24 mOhm	1900 pF	57.5 A	25 V	10 V	TO-220-3	TO-220-3		-55 °C	175 ░C	4 V	146 W	65 nC
ON Semiconductor FQP5N20L	MOSFET (Metal Oxide)	200 V	Through Hole	N-Channel	6.2 nC		325 pF	4.5 A	20 V		TO-220-3	TO-220-3		-55 °C	150 °C	2 V	52 W		1.2 Ohm	10 V	5 V
ON Semiconductor FQP5P10	MOSFET (Metal Oxide)	100 V	Through Hole	P-Channel	8.2 nC	1.05 Ohm	250 pF	4.5 A	30 V	10 V	TO-220-3	TO-220-3		-55 °C	175 ░C	4 V	40 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQP5 Series

N-Channel 60 V 55A (Tc) 133W (Tc) Through Hole TO-220-3

Documents

Technical documentation and resources