FQP5 Series

Catalog

MOSFET N-CH 60V 55A TO220-3

Part	Technology	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor FQP55N06	MOSFET (Metal Oxide)	60 V	Through Hole	N-Channel	46 nC	20 mOhm	1690 pF	55 A	25 V	10 V	TO-220-3	TO-220-3	133 W	-55 °C	175 ░C	4 V
ON Semiconductor FQP5N40	MOSFET (Metal Oxide)	400 V	Through Hole	N-Channel		1.6 Ohm	460 pF	4.5 A	30 V	10 V	TO-220-3	TO-220-3		-55 °C	150 °C	5 V	70 W	13 nC
ON Semiconductor FQP5N30	MOSFET (Metal Oxide)	300 V	Through Hole	N-Channel		900 mOhm	430 pF	5.4 A	30 V	10 V	TO-220-3	TO-220-3		-55 °C	150 °C	5 V	70 W	13 nC
ON Semiconductor FQP5N80	MOSFET (Metal Oxide)	800 V	Through Hole	N-Channel			1250 pF		30 V	10 V	TO-220-3	TO-220-3		-55 °C	150 °C	5 V	140 W		2.6 Ohm
ON Semiconductor FQP58N08	MOSFET (Metal Oxide)	80 V	Through Hole	N-Channel		24 mOhm	1900 pF	57.5 A	25 V	10 V	TO-220-3	TO-220-3		-55 °C	175 ░C	4 V	146 W	65 nC
ON Semiconductor FQP5N20L	MOSFET (Metal Oxide)	200 V	Through Hole	N-Channel	6.2 nC		325 pF	4.5 A	20 V		TO-220-3	TO-220-3		-55 °C	150 °C	2 V	52 W		1.2 Ohm	10 V	5 V
ON Semiconductor FQP5P10	MOSFET (Metal Oxide)	100 V	Through Hole	P-Channel	8.2 nC	1.05 Ohm	250 pF	4.5 A	30 V	10 V	TO-220-3	TO-220-3		-55 °C	175 ░C	4 V	40 W