SIF912EDZ-T1-E3

Obsolete

MOSFET 2N-CH 30V 7.4A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 7.4A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIF912EDZ-T1-E3

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.6 W
Rds On (Max) @ Id, Vgs [Max]	19 mOhm
Supplier Device Package	PowerPAK® (2x5)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Supplier Device Package	Configuration
Vishay General Semiconductor - Diodes Division SIF912EDZ-T1-E3	1.5 V	30 V	7.4 A	19 mOhm	1.6 W	15 nC	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	Logic Level Gate	PowerPAK® (2x5)	2 N-Channel (Dual) Common Drain

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 7.4A 1.6W Surface Mount PowerPAK® (2x5)

Technical documentation and resources

No documents available