SIF912 Series

Catalog

MOSFET 2N-CH 30V 7.4A PPAK

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Supplier Device Package	Configuration
Vishay General Semiconductor - Diodes Division SIF912EDZ-T1-E3	1.5 V	30 V	7.4 A	19 mOhm	1.6 W	15 nC	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	Logic Level Gate	PowerPAK® (2x5)	2 N-Channel (Dual) Common Drain