Specification	FDD6530A

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	710 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	3.3 W, 33 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.2 V

FDD6530A Series

20V N-Channel PowerTrench® MOSFET 21A, 32mΩ

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology
ON Semiconductor FDD6530A	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V 4.5 V	3.3 W 33 W	TO-252AA	21 A	1.2 V	20 V	8 V	Surface Mount	32 mOhm	710 pF	N-Channel	9 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)
ON Semiconductor FDD6530A	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V 4.5 V	3.3 W 33 W	TO-252 (DPAK)	21 A	1.2 V	20 V	8 V	Surface Mount	32 mOhm	710 pF	N-Channel	9 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDD6530A Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON)and fast switching speed.