FDD6530A Series

20V N-Channel PowerTrench® MOSFET 21A, 32mΩ

Catalog

20V N-Channel PowerTrench® MOSFET 21A, 32mΩ

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology
ON Semiconductor FDD6530A	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V 4.5 V	3.3 W 33 W	TO-252AA	21 A	1.2 V	20 V	8 V	Surface Mount	32 mOhm	710 pF	N-Channel	9 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)
ON Semiconductor FDD6530A	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V 4.5 V	3.3 W 33 W	TO-252 (DPAK)	21 A	1.2 V	20 V	8 V	Surface Mount	32 mOhm	710 pF	N-Channel	9 nC	-55 °C	175 ░C	MOSFET (Metal Oxide)

Catalog

20V N-Channel PowerTrench® MOSFET 21A, 32mΩ

Key Features

• 21 A, 20 V

• RDS(ON)= 32 mΩ @ VGS= 4.5 V

• RDS(ON)= 47 mΩ @ VGS= 2.5 V

• Low gate charge (6.5 nC typical)

• Fast switching

• High performance trench technology for extremelylow RDS(ON)

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON)and fast switching speed.