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SOT883B
Discrete Semiconductor Products

PMZB670UPE,315

NRND
Nexperia USA Inc.

20 V, SINGLE P-CHANNEL TRENCH MOSFET

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SOT883B
Discrete Semiconductor Products

PMZB670UPE,315

NRND
Nexperia USA Inc.

20 V, SINGLE P-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMZB670UPE,315
Current - Continuous Drain (Id) @ 25°C680 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.14 nC
Input Capacitance (Ciss) (Max) @ Vds87 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max)2.7 W
Power Dissipation (Max)360 mW
Rds On (Max) @ Id, Vgs [Max]850 mOhm
Supplier Device PackageDFN1006B-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.28
10$ 0.20
100$ 0.10
500$ 0.09
1000$ 0.07
2000$ 0.06
5000$ 0.06
Digi-Reel® 1$ 0.28
10$ 0.20
100$ 0.10
500$ 0.09
1000$ 0.07
2000$ 0.06
5000$ 0.06
N/A 16990$ 0.51
Tape & Reel (TR) 10000$ 0.07
20000$ 0.07
30000$ 0.07
50000$ 0.06
70000$ 0.06

Description

General part information

PMZB670 Series

20 V, single P-channel Trench MOSFET