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20 V, single P-channel Trench MOSFET
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20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Power Dissipation (Max) | Supplier Device Package | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.8 V | 4.5 V | Surface Mount | 680 mA | 850 mOhm | 20 V | 150 °C | -55 °C | 1.3 V | MOSFET (Metal Oxide) | 1.14 nC | 2.7 W | 360 mW | DFN1006B-3 | 8 V | 87 pF | 3-XFDFN | P-Channel |