Optoelectronics

QED233A4A0

Obsolete

EMITTER INFRARED 940NM 100MA RAD

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Optoelectronics

Obsolete

EMITTER INFRARED 940NM 100MA RAD

Technical Specifications

Parameters and characteristics for this part

GaAs Infrared Emitting Diode

Part	Current - DC Forward (If) (Max) [Max]	Radiant Intensity (Ie) Min @ If [Min]	Radiant Intensity (Ie) Min @ If	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Type	Package / Case [diameter]	Package / Case	Viewing Angle [custom]	Orientation	Voltage - Forward (Vf) (Typ)	Wavelength
ON Semiconductor QED221	100 mA	10 mW/sr	100 mA	-40 °C	100 °C	Through Hole	Infrared (IR)	5 mm	Radial T 1 3/4	40 °	Top View	1.7 V	880 nm
ON Semiconductor QED233A4A0	100 mA			-40 °C	100 °C	Through Hole	Infrared (IR)		Radial	40 °	Top View	1.5 V	940 nm
ON Semiconductor QED234	100 mA	27 mW/sr		-40 °C	100 °C	Through Hole	Infrared (IR)	5 mm	Radial T 1 3/4	40 °	Top View	1.6 V	940 nm
ON Semiconductor QED233A4A0	100 mA	10 mW/sr	100 mA	-40 °C	100 °C	Through Hole	Infrared (IR)	5 mm	Radial T 1 3/4	40 °	Top View	1.6 V	940 nm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The QED233/QED234 is a 940 nm GaAs/AlGaAs LED encapsulated in a clear, untinted, plastic T-1 3/4 package.

Technical documentation and resources

No documents available