QED234 Series

GaAs Infrared Emitting Diode

Catalog

GaAs Infrared Emitting Diode

Part	Current - DC Forward (If) (Max) [Max]	Radiant Intensity (Ie) Min @ If [Min]	Radiant Intensity (Ie) Min @ If	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Type	Package / Case [diameter]	Package / Case	Viewing Angle [custom]	Orientation	Voltage - Forward (Vf) (Typ)	Wavelength
ON Semiconductor QED221	100 mA	10 mW/sr	100 mA	-40 °C	100 °C	Through Hole	Infrared (IR)	5 mm	Radial T 1 3/4	40 °	Top View	1.7 V	880 nm
ON Semiconductor QED233A4A0	100 mA			-40 °C	100 °C	Through Hole	Infrared (IR)		Radial	40 °	Top View	1.5 V	940 nm
ON Semiconductor QED234	100 mA	27 mW/sr		-40 °C	100 °C	Through Hole	Infrared (IR)	5 mm	Radial T 1 3/4	40 °	Top View	1.6 V	940 nm
ON Semiconductor QED233A4A0	100 mA	10 mW/sr	100 mA	-40 °C	100 °C	Through Hole	Infrared (IR)	5 mm	Radial T 1 3/4	40 °	Top View	1.6 V	940 nm

GaAs Infrared Emitting Diode

• l = 940nm

• Chip material = GaAs with AlGaAs window

• Package type: T-1 3/4 (5mm lens diameter)

• Matched Photosensor: QSD122/123/124

• Mediium Emission Angle, 40°

• High 0utput Power

• Package material and color: Clear, untinted, plastic

• Ideal for remote control applications

The QED233/QED234 is a 940 nm GaAs/AlGaAs LED encapsulated in a clear, untinted, plastic T-1 3/4 package.