Specification	PMZ1200UPEYL

Current - Continuous Drain (Id) @ 25°C	410 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43.2 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	310 mW
Power Dissipation (Max)	1.67 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SOT-883
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	950 mV

PMZ1200UPE Series

30 V, P-channel Trench MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Nexperia USA Inc. PMZ1200UPEYL	410 mA	43.2 pF	310 mW	1.67 W	30 V	1.2 nC	Surface Mount	8 V	950 mV	MOSFET (Metal Oxide)	SOT-883	SC-101 SOT-883	1.4 Ohm	150 °C	-55 °C	1.5 V 4.5 V	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4101	$ 0.39

Description

General part information

PMZ1200UPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.