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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 410 mA | 43.2 pF | 310 mW | 1.67 W | 30 V | 1.2 nC | Surface Mount | 8 V | 950 mV | MOSFET (Metal Oxide) | SOT-883 | SC-101 SOT-883 | 1.4 Ohm | 150 °C | -55 °C | 1.5 V 4.5 V | P-Channel |