Discrete Semiconductor Products

STD13N60M2

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STMicroelectronics

N-CHANNEL 600 V, 350 MOHM TYP., 11 A MDMESH M2 POWER MOSFET IN A DPAK PACKAGE

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DocumentsSTD13N60M2 | Datasheet TN1224 +26

Discrete Semiconductor Products

STD13N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 350 MOHM TYP., 11 A MDMESH M2 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsSTD13N60M2 | Datasheet TN1224 +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD13N60M2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STD13N60M2 Series

N-channel 600 V, 350 mOhm typ., 11 A MDmesh M2 Power MOSFET in a DPAK package

Part	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STD13N60M2	380 mOhm	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	N-Channel	110 W	580 pF	17 nC	25 V	600 V	Surface Mount	150 °C	-55 °C	11 A	DPAK	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4442	$ 1.47
Newark	Each (Supplied on Cut Tape)	1	$ 1.98
		10	$ 1.38
		25	$ 1.26
		50	$ 1.13
		100	$ 1.01
		250	$ 0.94
		500	$ 0.86
		1000	$ 0.81

Description

General part information

STD13N60M2 Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.