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TO-220AB PKG
Discrete Semiconductor Products

IRF4905PBF

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INFINEON

POWER MOSFET, P CHANNEL, 55 V, 74 A, 0.02 OHM, TO-220AB, THROUGH HOLE

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TO-220AB PKG
Discrete Semiconductor Products

IRF4905PBF

Active
INFINEON

POWER MOSFET, P CHANNEL, 55 V, 74 A, 0.02 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF4905PBF
Current - Continuous Drain (Id) @ 25°C74 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC
Input Capacitance (Ciss) (Max) @ Vds3400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 11611$ 2.53
Tube 1$ 2.12
50$ 1.70
100$ 1.40
500$ 1.18
1000$ 1.01
2000$ 0.95
5000$ 0.92
10000$ 0.89

Description

General part information

IRF4905 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources