TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IRF4905STRLPBF

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P-CHANNEL MOSFET WITH A MAXIMUM CONTINUOUS DRAIN CURRENT OF 74 A, MAXIMUM OPERATING VOLTAGE OF 55 V, AND MAXIMUM POWER DISSIPATION OF 170 W.

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DocumentsIR Part Numbering System Datasheet +2

Discrete Semiconductor Products

IRF4905STRLPBF

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INFINEON

P-CHANNEL MOSFET WITH A MAXIMUM CONTINUOUS DRAIN CURRENT OF 74 A, MAXIMUM OPERATING VOLTAGE OF 55 V, AND MAXIMUM POWER DISSIPATION OF 170 W.

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DocumentsIR Part Numbering System Datasheet +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF4905STRLPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF4905 Series

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)
INFINEON IRF4905STRRPBF	4 V	20 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	42 A	55 V	D2PAK	20 V	10 V	180 nC	175 °C	-55 °C	Surface Mount	P-Channel	3500 pF	MOSFET (Metal Oxide)	170 W
INFINEON IRF4905LPBF	4 V	20 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	42 A	55 V	TO-262	20 V	10 V	180 nC	150 °C	-55 °C	Through Hole	P-Channel	3500 pF	MOSFET (Metal Oxide)	170 W
INFINEON IRF4905PBF	4 V	20 mOhm	TO-220-3	74 A	55 V	TO-220AB	20 V	10 V	180 nC	175 °C	-55 °C	Through Hole	P-Channel	3400 pF	MOSFET (Metal Oxide)	200 W
INFINEON IRF4905STRLPBF	4 V	20 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	42 A	55 V	D2PAK	20 V	10 V	180 nC	150 °C	-55 °C	Surface Mount	P-Channel	3500 pF	MOSFET (Metal Oxide)	170 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	800	$ 1.07
Digikey	Cut Tape (CT)	1	$ 2.71
		10	$ 2.25
		100	$ 1.79
	Digi-Reel®	1	$ 2.71
		10	$ 2.25
		100	$ 1.79
	N/A	10151	$ 3.46
	Tape & Reel (TR)	800	$ 1.51
		1600	$ 1.28
		2400	$ 1.22
		5600	$ 1.17

Description

General part information

IRF4905 Series

The IRF4905STRLPBF is a -55V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliable device for wide variety of other applications.

IRF4905STRLPBF

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IRF4905STRLPBF

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Technical Specifications

IRF4905 Series

Pricing

Description

IRF4905 Series

Documents

IR Part Numbering System

Datasheet

Simulation Model EN

Technical Data Sheet EN

IRF4905 Series