Specification	2N6384

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	6 W
Supplier Device Package	TO-204AA (TO-3)
Vce Saturation (Max) @ Ib, Ic	3 V
Vce Saturation (Max) @ Ib, Ic [custom]	10 A
Vce Saturation (Max) @ Ib, Ic [custom]	100 mA
Voltage - Collector Emitter Breakdown (Max)	60 V

2N6384-Darlington Series

MIL-PRF-19500/523

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic [custom]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case
Microchip Technology 2N6384	TO-204AA (TO-3)	1000 hFE	60 V	Through Hole	6 W	1 mA	10 A	100 mA	3 V	-55 °C	175 ░C	TO-204AA TO-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 61.78
Microchip Direct	N/A	1	$ 66.53
Newark	Each	100	$ 61.78
		500	$ 59.40

Description

General part information

2N6384-Darlington Series

This specification covers the performance requirements for NPN silicon, power Darlington, 2N6383, 2N6384 and 2N6385 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/523. The device package outlines are as follows: TO-204AA (formerly TO-3) for all encapsulated device types.

Documents

Technical documentation and resources

2N6383 - 2N6385

Data Sheets

Product Change Notice EN

Datasheet