Specification	FDMD8580

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	82 A, 16 A
Drain to Source Voltage (Vdss)	80 V
Gate Charge (Qg) (Max) @ Vgs	80 nC
Input Capacitance (Ciss) (Max) @ Vds	5875 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max [Max]	2.3 W
Rds On (Max) @ Id, Vgs	4.6 mOhm
Supplier Device Package	Power56
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.5 V

FDMD8580 Series

Dual N-Channel PowerTrench® MOSFET 80V, 82A, 4.6mΩ

Part	Vgs(th) (Max) @ Id	Configuration	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMD8580	4.5 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	80 V	-55 °C	150 °C	16 A 82 A	Power56	8-PowerWDFN	4.6 mOhm	Surface Mount	80 nC	2.3 W	5875 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMD8580 Series

This device includes two 80V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/ QgFOM silicon.