FDMD8580 Series

Dual N-Channel PowerTrench® MOSFET 80V, 82A, 4.6mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 80V, 82A, 4.6mΩ

Part	Vgs(th) (Max) @ Id	Configuration	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMD8580	4.5 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	80 V	-55 °C	150 °C	16 A 82 A	Power56	8-PowerWDFN	4.6 mOhm	Surface Mount	80 nC	2.3 W	5875 pF

Catalog

Dual N-Channel PowerTrench® MOSFET 80V, 82A, 4.6mΩ

Key Features

• Q1: N-ChannelMax rDS(on)= 4.6 mΩ at VGS= 10 V, ID= 16 AMax rDS(on)= 6.0 mΩ at VGS= 8 V, ID= 14 A

• Q2: N-ChannelMax rDS(on)= 4.6 mΩ at VGS= 10 V, ID= 16 AMax rDS(on)= 6.0 mΩ at VGS= 8 V, ID= 14 A

• Ideal for Flexible Layout in Primary Side of Bridge Topology

• 100% UIL Tested

• Kelvin High Side MOSFET Drive Pin-out Capability

• RoHS Compliant

Description

This device includes two 80V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/ QgFOM silicon.