Integrated Circuits (ICs)

LTC1157CS8#PBF

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Analog Devices Inc./Maxim Integrated

GATE DRIVER, 2 CHANNELS, HIGH SIDE OR LOW SIDE, MOSFET, 8 PINS, NSOIC

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DocumentsDatasheet R294 Reliability Data

Integrated Circuits (ICs)

LTC1157CS8#PBF

Active

Analog Devices Inc./Maxim Integrated

GATE DRIVER, 2 CHANNELS, HIGH SIDE OR LOW SIDE, MOSFET, 8 PINS, NSOIC

Deep-Dive with AI

DocumentsDatasheet R294 Reliability Data

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LTC1157CS8#PBF

Channel Type	Independent
Driven Configuration	High-Side or Low-Side
Gate Type	N-Channel MOSFET, MOSFET (N-Channel)
Input Type	Non-Inverting
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Supplier Device Package	8-SO
Voltage - Supply [Max]	5 V
Voltage - Supply [Min]	3.3 V

LTC1157 Series

Part	Gate Type	Input Type	Mounting Type	Package / Case	Package / Case	Package / Case	Supplier Device Package	Driven Configuration	Channel Type	Operating Temperature [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	Number of Drivers
Analog Devices Inc./Maxim Integrated LTC1157CS8#PBF	MOSFET (N-Channel) N-Channel MOSFET	Non-Inverting	Surface Mount	0.154 in	8-SOIC	3.9 mm	8-SO	High-Side or Low-Side	Independent	70 °C	5 V	3.3 V	2
Analog Devices Inc./Maxim Integrated LTC1157CS8#TRPBF	MOSFET (N-Channel)	Non-Inverting	Surface Mount	0.154 in	8-SOIC	3.9 mm	8-SO	High-Side or Low-Side	Independent	70 °C	5 V	3.3 V	2
Analog Devices Inc./Maxim Integrated LTC1157CN8#PBF	MOSFET (N-Channel)	Non-Inverting	Through Hole		8-DIP (0.300" 7.62mm)		8-PDIP	High-Side or Low-Side	Independent	70 °C	5 V	3.3 V	2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	299	$ 10.37	1m+
	Tube	1	$ 10.90	1m+
		10	$ 7.62
		25	$ 6.77
		100	$ 5.83
		250	$ 5.37
		500	$ 5.09
		1000	$ 4.86
Newark	Each	1	$ 10.37	1m+
		10	$ 6.20
		25	$ 5.87
		50	$ 5.54
		100	$ 5.21
		300	$ 4.81

Description

General part information

LTC1157 Series

The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low RDS(ON)Nchannel switch (N-channel switches are required at 3.3V because P-channel MOSFETS do not have guaranteed RDS(ON)with VGS ≤ 3.3V). The LTC1157 internal charge pump boosts the gate drive voltage 5.4V above the positive rail (8.7V above ground), fully enhancing a logic level N-channel switch for 3.3V high-side applications and a standard N-channel switch for 3.3V low-side applications.The gate drive voltage at 5V is typically 8.8V above supply (13.8V above ground), so standard N-channel MOSFET switches can be used for both high-side and low-side applications. Micropower operation, with 3µA standby current and 80µA operating current, makes the LTC1157 well suited for battery-powered applications.The LTC1157 is available in both 8-pin DIP and SOIC.ApplicationsNotebook Computer Power ManagementPalmtop Computer Power ManagementP-Channel Switch ReplacementBattery Charging and ManagementMixed 5V and 3.3V Supply SwitchingStepper Motor and DC Motor ControlCellular Telephones and Beepers