The LTC1157 dual 3.3V micropower MOSFET gate driver makes it possible to switch either supply or ground reference loads through a low RDS(ON)Nchannel switch (N-channel switches are required at 3.3V because P-channel MOSFETS do not have guaranteed RDS(ON)with VGS ≤ 3.3V). The LTC1157 internal charge pump boosts the gate drive voltage 5.4V above the positive rail (8.7V above ground), fully enhancing a logic level N-channel switch for 3.3V high-side applications and a standard N-channel switch for 3.3V low-side applications.The gate drive voltage at 5V is typically 8.8V above supply (13.8V above ground), so standard N-channel MOSFET switches can be used for both high-side and low-side applications. Micropower operation, with 3µA standby current and 80µA operating current, makes the LTC1157 well suited for battery-powered applications.The LTC1157 is available in both 8-pin DIP and SOIC.ApplicationsNotebook Computer Power ManagementPalmtop Computer Power ManagementP-Channel Switch ReplacementBattery Charging and ManagementMixed 5V and 3.3V Supply SwitchingStepper Motor and DC Motor ControlCellular Telephones and Beepers