Specification	NVTYS003N04CTWG

Current - Continuous Drain (Id) @ 25°C	21 A, 99 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	69 W, 3.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVTYS003N04C Series

MOSFET – Power, Single, N-Channel

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Grade	Vgs(th) (Max) @ Id	Qualification	Technology	FET Type
ON Semiconductor NVTYS003N04CTWG	Surface Mount	1600 pF	21 A 99 A	8-LFPAK	3.9 mOhm	10 V	3.2 W 69 W	-55 °C	175 ░C	24 nC	20 V	40 V	8-LFPAK56 SOT-1205	Automotive	3.5 V	AEC-Q101	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 40 V, 3.9mΩ, 99 A

Technical documentation and resources