MOSFET – Power, Single, N-Channel
MOSFET – Power, Single, N-Channel
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Grade | Vgs(th) (Max) @ Id | Qualification | Technology | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | Surface Mount | 1600 pF | 21 A 99 A | 8-LFPAK | 3.9 mOhm | 10 V | 3.2 W 69 W | -55 °C | 175 ░C | 24 nC | 20 V | 40 V | 8-LFPAK56 SOT-1205 | Automotive | 3.5 V | AEC-Q101 | MOSFET (Metal Oxide) | N-Channel |