Discrete Semiconductor Products

STFW24N60M2

Obsolete

MOSFET N-CH 600V 18A TO3PF

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 18A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	STFW24N60M2

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	48 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)
STMicroelectronics STFW24N60M2	600 V	1060 pF	N-Channel	TO-3P-3 Full Pack	29 nC	190 mOhm	MOSFET (Metal Oxide)	10 V	Through Hole	18 A	150 °C	-55 °C	4 V	25 V	TO-3PF	48 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET N-CH 600V 18A TO3PF

Technical documentation and resources