Discrete Semiconductor Products

FDC6333C-G

Obsolete

ON Semiconductor

MOSFET N/P-CH 30V 2.5A/2A SSOT6

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Discrete Semiconductor Products

FDC6333C-G

Obsolete

ON Semiconductor

MOSFET N/P-CH 30V 2.5A/2A SSOT6

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDC6333C-G

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2 A, 2.5 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	5.7 nC
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	185 pF, 282 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs [Max]	130 mOhm, 95 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDC6333C Series

N & P-Channel PowerTrench<sup>®</sup> MOSFETs, 30V

Part	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
ON Semiconductor FDC6333C-G	5.7 nC	6.6 nC	95 mOhm 130 mOhm	3 V	SuperSOT™-6	2 A 2.5 A	185 pF 282 pF	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	Surface Mount	N and P-Channel	30 V	700 mW	MOSFET (Metal Oxide)
ON Semiconductor FDC6333C				3 V	SuperSOT™-6	2 A 2.5 A		-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	Surface Mount	N and P-Channel	30 V	700 mW	MOSFET (Metal Oxide)	282 pF	95 mOhm	6.6 nC	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDC6333C Series

These N & P-Channel MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Documents

Technical documentation and resources

No documents available