FDC6333C Series

N & P-Channel PowerTrench® MOSFETs, 30V

Catalog

N & P-Channel PowerTrench® MOSFETs, 30V

Part	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
ON Semiconductor FDC6333C-G	5.7 nC	6.6 nC	95 mOhm 130 mOhm	3 V	SuperSOT™-6	2 A 2.5 A	185 pF 282 pF	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	Surface Mount	N and P-Channel	30 V	700 mW	MOSFET (Metal Oxide)
ON Semiconductor FDC6333C				3 V	SuperSOT™-6	2 A 2.5 A		-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	Surface Mount	N and P-Channel	30 V	700 mW	MOSFET (Metal Oxide)	282 pF	95 mOhm	6.6 nC	Logic Level Gate

Catalog

N & P-Channel PowerTrench® MOSFETs, 30V

Key Features

• Q1 2.5 A, 30V

• RDS(on)= 95 mΩ@ VGS= 10 V

• RDS(on)= 150 mΩ @ VGS= 4.5 V

• Q2 –2.0 A, 30V.

• RDS(on)= 150 mΩ@ VGS= -10 V

• RDS(on)= 220 mΩ @ VGS= -4.5 V

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• SuperSOT –6 package: small footprint (72% smaller thanSO-8); low profile (1mm thick).

Description

These N & P-Channel MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.