IPB65R110CFDAATMA1
ActiveIPB65R110CFDA ·INCREASED SAFETY MARGIN DUE TO HIGHER BREAKDOWN VOLTAGE ·REDUCED EMI APPEARANCE AND EASY TO DESIGN IN ·BETTER LIGHT LOAD EFFICIENCY
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IPB65R110CFDAATMA1
ActiveIPB65R110CFDA ·INCREASED SAFETY MARGIN DUE TO HIGHER BREAKDOWN VOLTAGE ·REDUCED EMI APPEARANCE AND EASY TO DESIGN IN ·BETTER LIGHT LOAD EFFICIENCY
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB65R110CFDAATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31.2 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 118 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3240 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 277.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB65R110 Series
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.
Documents
Technical documentation and resources
