IPB65R110 Series
Manufacturer: INFINEON
Beta
⌘K
IPB65R110CFDA ·INCREASED SAFETY MARGIN DUE TO HIGHER BREAKDOWN VOLTAGE ·REDUCED EMI APPEARANCE AND EASY TO DESIGN IN ·BETTER LIGHT LOAD EFFICIENCY
| Part | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Technology | Qualification | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 110 mOhm | 31.2 A | Surface Mount | 277.8 W | 118 nC | 4.5 V | MOSFET (Metal Oxide) | AEC-Q101 | 20 V | -40 °C | 150 °C | 10 V | 650 V | Automotive | 3240 pF | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |
 INFINEON | 110 mOhm | 31.2 A | Surface Mount | 277.8 W | 118 nC | 4.5 V | MOSFET (Metal Oxide) | 20 V | -55 °C | 150 °C | 10 V | 650 V | 3240 pF | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |