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Technical Specifications
Parameters and characteristics for this part
| Specification | NX5008NBKMYL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 350 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 29 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-883, SC-101 |
| Power Dissipation (Max) | 2.8 W, 350 mW |
| Rds On (Max) @ Id, Vgs | 2.8 Ohm |
| Supplier Device Package | SOT-883 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
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Description
General part information
NX5008NBKM Series
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources