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50 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, N-channel Trench MOSFET
50 V, N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.7 nC | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 2.8 Ohm | 29 pF | SOT-883 | 150 °C | -55 °C | 350 mA | 2.8 W 350 mW | 900 mV | SC-101 SOT-883 | 50 V | 8 V |