Discrete Semiconductor Products

STL26N30M8

Obsolete

MOSFET N-CH 300V 23A POWERFLAT

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 300V 23A POWERFLAT

Technical Specifications

Parameters and characteristics for this part

Specification	STL26N30M8

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	30.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	114 W
Rds On (Max) @ Id, Vgs	89 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STL26N30M8	N-Channel	150 °C	-55 °C	300 V	8-PowerVDFN	25 V	114 W	30.8 nC	23 A	Surface Mount	89 mOhm	1430 pF	10 V	MOSFET (Metal Oxide)	PowerFlat™ (5x6)	5 V
STMicroelectronics STL26N60DM6	N-Channel	150 °C	-55 °C	600 V	4-PowerVDFN 8-PowerVDFN	25 V	110 W	24 nC	15 A	Surface Mount	215 mOhm		10 V	MOSFET (Metal Oxide)	PowerFlat™ (8x8) HV	4.75 V	940 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.20

General part information

N-Channel 300 V 23A (Tc) 114W (Tc) Surface Mount PowerFlat™ (5x6)

Technical documentation and resources

No documents available