Discrete Semiconductor Products

TW107N65C,S1F

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SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM

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Discrete Semiconductor Products

Active

SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	TW107N65C,S1F

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	76 W
Rds On (Max) @ Id, Vgs	145 mOhm
Supplier Device Package	TO-247
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage TW107N65C,S1F	TO-247	76 W	145 mOhm	175 °C	600 pF	Through Hole	25 V	-10 V	21 nC	TO-247-3	650 V	20 A	18 V	5 V	N-Channel
Toshiba Semiconductor and Storage TW045N120C,S1F	TO-247		59 mOhm	175 °C		Through Hole	25 V	-10 V	57 nC	TO-247-3	1.2 kV		18 V	5 V	N-Channel	182 W	1969 pF

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General part information

SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM

Technical documentation and resources

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