3rd Generation Series

Catalog

SIC MOSFETS G3 650V SIC-MOSFET TO-247 107MOHM

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Toshiba Semiconductor and Storage TW107N65C,S1F	TO-247	76 W	145 mOhm	175 °C	600 pF	Through Hole	25 V	-10 V	21 nC	TO-247-3	650 V	20 A	18 V	5 V	N-Channel
Toshiba Semiconductor and Storage TW045N120C,S1F	TO-247		59 mOhm	175 °C		Through Hole	25 V	-10 V	57 nC	TO-247-3	1.2 kV		18 V	5 V	N-Channel	182 W	1969 pF