Discrete Semiconductor Products

IRF8915TRPBF

Obsolete

INFINEON

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 18.3 MOHM;

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DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF8915TRPBF

Obsolete

INFINEON

IR MOSFET™ N+N DUAL POWER MOSFET ; SO-8 PACKAGE; 18.3 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF8915TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	18.3 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

IRF89 Series

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IRF8915	540 pF	Logic Level Gate	2 W	8.9 A	7.4 nC	Surface Mount	0.154 in	8-SOIC	3.9 mm	18.3 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.5 V
INFINEON IRF8910GPBF		Logic Level Gate	2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC
INFINEON IRF8910TRPBF-1			2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC
INFINEON IRF8915TRPBF	540 pF	Logic Level Gate	2 W	8.9 A	7.4 nC	Surface Mount	0.154 in	8-SOIC	3.9 mm	18.3 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.5 V
INFINEON IRF8910TRPBF		Logic Level Gate	2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC
INFINEON IRF8910PBF		Logic Level Gate	2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
		14211	$ 0.00

Description

General part information

IRF89 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources