IRF89 Series

Manufacturer: INFINEON

Catalog

MOSFET 2N-CH 20V 8.9A 8SO

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IRF8915	540 pF	Logic Level Gate	2 W	8.9 A	7.4 nC	Surface Mount	0.154 in	8-SOIC	3.9 mm	18.3 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.5 V
INFINEON IRF8910GPBF		Logic Level Gate	2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC
INFINEON IRF8910TRPBF-1			2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC
INFINEON IRF8915TRPBF	540 pF	Logic Level Gate	2 W	8.9 A	7.4 nC	Surface Mount	0.154 in	8-SOIC	3.9 mm	18.3 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.5 V
INFINEON IRF8910TRPBF		Logic Level Gate	2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC
INFINEON IRF8910PBF		Logic Level Gate	2 W	10 A		Surface Mount	0.154 in	8-SOIC	3.9 mm	13.4 mOhm	20 V	150 °C	-55 °C	2 N-Channel (Dual)	8-SO	MOSFET (Metal Oxide)	2.55 V	960 pF	11 nC