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SOT1210
Discrete Semiconductor Products

PSMN040-100MSEX

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Nexperia USA Inc.

N-CHANNEL 100 V 36.6 MΩ STANDARD LEVEL MOSFET IN LFPAK33 DESIGNED SPECIFICALLY FOR HIGH POWER POE APPLICATIONS

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SOT1210
Discrete Semiconductor Products

PSMN040-100MSEX

Active
Nexperia USA Inc.

N-CHANNEL 100 V 36.6 MΩ STANDARD LEVEL MOSFET IN LFPAK33 DESIGNED SPECIFICALLY FOR HIGH POWER POE APPLICATIONS

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN040-100MSEX
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds1470 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Rds On (Max) @ Id, Vgs36.6 mOhm
Supplier Device PackageLFPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.72

Description

General part information

PSMN040-100MSE Series

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements.