STW24N60DM2
ActiveN-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH DM2 POWER MOSFET IN TO-247 PACKAGE
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STW24N60DM2
ActiveN-CHANNEL 600 V, 0.175 OHM TYP., 18 A MDMESH DM2 POWER MOSFET IN TO-247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW24N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 29 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1055 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 200 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW24N60DM2 Series
These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources