Discrete Semiconductor Products

VS-C10ET07T-M3

Obsolete

DIODE SIL CARB 650V 10A TO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 650V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-C10ET07T-M3

Capacitance @ Vr, F	430 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	55 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Speed	500 ns, 200 mA
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F
Vishay General Semiconductor - Diodes Division VS-C10ET07T-M3	200 mA 500 ns	Through Hole	55 µA	1.8 V	TO-220AC	TO-220-2	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	650 V	10 A	430 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.82

General part information

Diode 650 V 10A Through Hole TO-220AC

Technical documentation and resources

No documents available