C10ET07 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
DIODE SIL CARB 650V 10A TO220AC
| Part | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Package / Case | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 200 mA 500 ns | Through Hole | 55 µA | 1.8 V | TO-220AC | TO-220-2 | SiC (Silicon Carbide) Schottky | 175 ░C | -55 °C | 650 V | 10 A | 430 pF |