Discrete Semiconductor Products

SI4886DY-T1-E3

Obsolete

MOSFET N-CH 30V 9.5A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 9.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4886DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	250 µA, 800 mV

Part	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type
Vishay General Semiconductor - Diodes Division SI4886DY-T1-E3	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	Surface Mount	20 V	1.56 W	30 V	-55 °C	150 °C	10 mOhm	20 nC	250 µA 800 mV	8-SOIC	MOSFET (Metal Oxide)	9.5 A	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 9.5A (Ta) 1.56W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available