SI4886 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 9.5A 8SO
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | Surface Mount | 20 V | 1.56 W | 30 V | -55 °C | 150 °C | 10 mOhm | 20 nC | 250 µA 800 mV | 8-SOIC | MOSFET (Metal Oxide) | 9.5 A | N-Channel |