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ONSEMI MJD31T4G
Discrete Semiconductor Products

MJD6039T4G

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ON Semiconductor

TRANS DARLINGTON NPN 80V 4A 3-PIN(2+TAB) DPAK T/R

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ONSEMI MJD31T4G
Discrete Semiconductor Products

MJD6039T4G

Active
ON Semiconductor

TRANS DARLINGTON NPN 80V 4A 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD6039T4G
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce500 hFE
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]1.75 W
Supplier Device PackageDPAK
Vce Saturation (Max) @ Ib, Ic [Max]2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.94
10$ 0.81
100$ 0.56
500$ 0.47
1000$ 0.40
Tape & Reel (TR) 2500$ 0.36
5000$ 0.34
12500$ 0.31
25000$ 0.31
NewarkEach (Supplied on Full Reel) 1$ 0.43
3000$ 0.42
6000$ 0.39
12000$ 0.36
18000$ 0.34
30000$ 0.32
ON SemiconductorN/A 1$ 0.33

Description

General part information

NJVMJD6039 Series

The NPN Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors and power amplifiers.