NJVMJD6039 Series

NPN Darlington Bipolar Power Transistor

Catalog

NPN Darlington Bipolar Power Transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MJD6039T4G	1.75 W	10 µA	4 A	Surface Mount	80 V	2.5 V	DPAK	500 hFE	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-65 °C
ON Semiconductor NJVMJD6039T4G	1.75 W	10 µA	4 A	Surface Mount	80 V	2.5 V	DPAK	500 hFE	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-65 °C

Catalog

NPN Darlington Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Available on 16 mm Tape and Reel for Automatic Handling ("T4" Suffix)

• Monolithic Construction With Built-in Base-Emitter Shunt Resistors

• High DC Current Gain -hFE= 2500 (Typ) @ IC = 4.0 Adc

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• PbFree Package is Available

Description

The NPN Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors and power amplifiers.