Discrete Semiconductor Products

FDFMA2P853T

Obsolete

ON Semiconductor

MOSFET P-CH 20V 3A MICROFET

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Discrete Semiconductor Products

FDFMA2P853T

Obsolete

ON Semiconductor

MOSFET P-CH 20V 3A MICROFET

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDFMA2P853T

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6 nC
Input Capacitance (Ciss) (Max) @ Vds	435 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	6-MicroFET (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.3 V

FDFMA2P853 Series

Integrated P-Channel PowerTrench<sup>®</sup> MOSFET and Schottky Diode -20V , -3.0A, 120mΩ

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [custom]	Package / Case [custom]	Package / Case
ON Semiconductor FDFMA2P857	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853T	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853T	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	7-SOIC	8-SOIC	6 nC	7	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1110	$ 0.27
		1110	$ 0.27

Description

General part information

FDFMA2P853 Series

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.

Documents

Technical documentation and resources