FDFMA2P853 Series

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V , -3.0A, 120mΩ

Catalog

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V , -3.0A, 120mΩ

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case [custom]	Package / Case [custom]	Package / Case
ON Semiconductor FDFMA2P857	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853T	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	6-MicroFET (2x2)	6-VDFN Exposed Pad	6 nC
ON Semiconductor FDFMA2P853T	3 A	P-Channel	Schottky Diode (Isolated)	1.8 V 4.5 V	Surface Mount	1.3 V	8 V	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	435 pF	120 mOhm	1.4 W	7-SOIC	8-SOIC	6 nC	7	3.9 mm	0.154 in

Catalog

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V , -3.0A, 120mΩ

Key Features

-3.0 A, -20V.

• RDS(ON)= 120 mΩ @ VGS= -4.5 V

• RDS(ON)= 160 mΩ @ VGS= -2.5 V

• RDS(ON)= 240 mΩ @ VGS= -1.8 VSchottky:VF < 0.46 V @ 500 mA

• Low Profile - 0.8 mm maximun - in the new packageMicroFET 2x2 mm

• RoHS Compliant

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.